Growth characteristics of tin sulfides crystals by the vapor transport method using SnS and sulfur powders: Effect of temperature and pressure

Tin sulphide compounds have two different types of 2D layered crystal structures with different electrical conduction types. Tin disulphide with n-type semiconductor characteristics has a 2D crystal structure with hexagonal symmetry, while tin monosulphide (SnS) with p-type semiconductor characteristics has a 2D crystal structure with orthorhombic symmetry. These layered materials have many potential applications such as electronic and optoelectronic devices. Meanwhile, it is known that the growth products of tin sulphides are very sensitive to the process parameters. In this study, the authors investigated the growth phenomena of tin sulphides by the vapour transport method using SnS and sulphur powders because vapour transport reactions are relatively simple and facilitate the understanding of the effects of growth parameters. The growth behaviour of tin sulphides as a function of process temperature and pressure was observed, and the results can be explained in terms of the sulphurisation and reduction of SnS powder during the growth process.