Development of Technological Modes the Formation of a Vertical PNP Transistor in the Structure of an Integrated Op-amp for a Complementary Bipolar Technological Route

In this paper, we explore modification of the basic complementary technological route using the TCAD-simulation method for simple and reliable control of the breakdown voltage of a vertical PNP transistor in the structure of an integral op-amp. We are offer the additional doping of the donor dopant into the hidden layer. In the process of the simulation experiments of the numerical values of technological parameters, this modification was being discovered. The synergies between the technological parameters and the basic electrophysical parameters of the transistor was fixed.