Voltage-Dependent Temperature Coefficient of the I–V Curves of Crystalline Silicon Photovoltaic Modules

The temperature dependence of the I–V curves of various kinds of commercial crystalline silicon photovoltaic modules is investigated, based on experiments by using a solar simulator and a thermostatic chamber. The temperature coefficient (TC) of the output voltage of the modules with p-n junction technology is found to closely agree with a formula as a function of their output voltage per cell and temperature, throughout the voltage range of about 0.5–0.7 V per cell, which is important for estimating the P max , fill factor, and V oc of the modules. The formula is derived from a one-diode model, and reproduces the TC of the I–V curves within ±5% relative error without adjusting the parameter for each module. The formula is successfully applied for translating the modules' I–V curves.