Growth mechanism of transfer-free graphene synthesized from different carbon sources and verified by ion implantation

The synthesis of transfer-free graphene is necessary for expanding its industrial applications. Although the direct synthesis of graphene on the insulating substrate via a metal sacrificial film was reported, the growth mechanism of transfer-free graphene still remains to be studied. Herein, a detailed synthesis model of graphene grown from different carbon sources has been established to help in selecting the growth conditions for high-quality graphene. A detailed discussion on the critical influence of dissolution and the diffusion rate of carbon atoms on the growth process has also been presented. The high decomposition temperature carbon sources promote the formation of high-quality monolayers of graphene. The carbon diffusion rate of the Cu film is significantly higher than that of Ni. This promotes the synthesis of graphene from methane and diamond-like carbon. However, adverse effects are exerted on polymethyl methacrylate. Ion implantation technology and different components of the Ni–Cu alloy were used to understand this growth mechanism. This work could guide the growth conditions of transfer-free, large-scale, and high-quality graphene that can be potentially used for the fabrication of a semiconductor or an insulation substrate in theory. The reported method can generate interest in the field and increase the industrial applications of graphene-based devices that exhibit rough or patterned surfaces.