InGaN frequency stabilized high-power devices for atom-cooling and trapping enabling quantum technology (Conference Presentation)

Quantum based devices offer distinct advantages over conventional technology, such as improved sensitivity for sensing applications or enhanced accuracy for metrology. To utilize this potential, a number of technical requirements must be met, such as the cooling and trapping of neutral atoms for their use as quantum systems. We present our work on InGaN-based semiconductor cooling lasers for a variety of atomic species such as strontium, magnesium and ytterbium whos target wavelength was met by quantum-well composition engineering. Results on growth-epitaxy, facet coating as well as different configurations such as ECDL and MOPAs are presented, depending on the requirement of the application.