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Optoelectronic devices based on silicon carbide p-n junctions produced by various processes
Optoelectronic devices based on silicon carbide p-n junctions produced by various processes
1982
S. I. Vlaskina
K.D. Demakov
S. V. Svechnikov
O. T. Sergeev
Keywords:
Optoelectronics
Electro-optics
Gaseous diffusion
Optical fiber
Silicon carbide
Ion implantation
Surface diffusion
Materials science
Light-emitting diode
Surface finishing
Correction
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