Metal wiring of semiconductor device and method for forming the same

PURPOSE: A metal wiring of a semiconductor device and a method for forming the same are provided to prevent the diffusion of a copper component by using a diffusion layer having a multi-layer. CONSTITUTION: A metal wiring of a semiconductor device comprises an insulating layer(102), a diffusion barrier layer(110), and a metal layer(112). The insulating layer is arranged on the semiconductor substrate(100). The insulating layer has the interconnection region. A diffusion protection layer is arranged in the interconnection region of the insulating layer. The diffusion barrier layer has a TaN film(104), a MoxOy film(106), and a Mo film(108). A metal layer is arranged on the diffusion barrier layer and fills the interconnection region of the insulating layer.