Ambipolar inverter device structure and manufacturing method thereof

An ambipolar inverter device suitable for use in an integrated circuit. An electron blocking layer and a hole blocking layer are respectively disposed at two sides of the ambipolar semiconductor layer, so that the operation of the inverter may be executed in a single device. In addition, the manufacturing method of the disclosure is simple, adopting only one patterning step, so as to effectively improve the performance of the ambipolar device.