Simulation of internal distribution of microwave noise sources in a short-channel nMOSFET
2000
High frequency excess noise in short-channel MOSFETs is discussed from the point of view of internal device characteristics, such as noise source density and current densities. It is demonstrated that the current density component perpendicular to the interface produces a major portion of the high frequency (diffusion) noise in short-channel MOSFETs.
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