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Fully Scalable Gain Memory Cell for Future Drams
Fully Scalable Gain Memory Cell for Future Drams
1991
Krautschneider
Risch
Lau
Schmitt-Landsiedel
Keywords:
Dram
Capacitance
Capacitor
Transistor
Scalability
Memory cell
Logic gate
Computer science
Electrical engineering
Schottky diode
Correction
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