Origin of the self-limited electron densities at Al2O3/SrTiO3 heterostructures grown by atomic layer deposition – oxygen diffusion model
2013
Recently, 2-dimensional electron gas (2-DEG) was discovered at the interface of Al2O3/SrTiO3 (STO) heterostructures, in which the amorphous Al2O3 layers were grown by atomic layer deposition (ALD). The saturated electron density at the Al2O3/STO heterostructures above the critical thickness of Al2O3 is explained by an oxygen diffusion mechanism.
Keywords:
- Correction
- Source
- Cite
- Save
- Machine Reading By IdeaReader
21
References
15
Citations
NaN
KQI