High-resolution X-ray diffraction study of CZ-grown GaAsP crystals

We report results of X-ray investigations of tellurium-doped GaAs 1-x P x (with 0.07 ≤ x ≤ 0.20) single crystals, conducted in order to support finding proper growth parameters which would yield a material of sufficient homogeneity of the lattice parameter for prospective applications. Our samples were studied using high-resolution diffractometry which allowed to obtain both rocking curves and reciprocal space maps of the diffracted intensity, as well as using plane-wave topography in the reflection mode. Weak reflections were also used to study the influence of Te atoms on the compound lattice.