Thermoelectric properties of vapor-grown polycrystalline cubic SiC
2006
Polycrystalline cubic silicon carbide layers, undoped and codoped with nitrogen and boron, have been grown via thermal decomposition of methyltrichlorosilane vapor in hydrogen, and their transport properties (electrical conductivity, thermoelectric power, and thermal conductivity) have been studied in the temperature range 80–1100 K.
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