Fringe Gate Leakage of 28nm HK/MG nMOSFETs with Nitridation Treatments

DPN nitridation treatment is a useful method to improve the related dielectric constant (k-value) and trap issues in the formation of high-k gate dielectric. In this work, the main focus aims on the gate leakage after the high-k growth and the shape formation after etching process with the same concentration of nitrogen, but the different annealing temperatures. Using three tested devices with normal long-channel, bulk-area, and finger-type devices to probe the leakage issue related to the processes is a feasible and possible way.