Non-destructive characterisation of (Ga,In,Al,As,P)-based ternary multilayer structures using spectroscopic ellipsometry

Abstract Spectroscopic ellipsometry has been used to measure compositions and layer thicknesses of two-, three- and four-layer structures consisting of Al 0.2 Ga 0.8 As/GaAs and In 0.53 Ga 0.47 As/Al 0.48 In 0.52 As/InP materials. A simple procedure has been developed to obtain Al 0.48 In 0.52 As dielectric functions by scaling InP values. Very good agreement has been obtained with destructive techniques.