Chromium diffusion in gallium arsenide

Chromium diffusion in GaAs was studied by measuring the thickness of high-resistivity layers formed during diffusion of chromium (a deep acceptor) in n-GaAs. The dependence of the chromium diffusivity in GaAs on the temperature, arsenic-vapor pressure, conductivity type, and carrier density was determined. The temperature dependence of the diffusivity is described by the Arrhenius equation with the parameters D0=8×109 cm2/s and E=4.9 eV. The dependence of the diffusivity on the arsenic-vapor pressure is described by the expression \(D \propto P_{As_4 }^{ - m} \), where m≈0.4. The experimental data obtained are interpreted in terms of the concept of the dissociative mechanism of migration of Cr atoms in GaAs.