A rapid polishing of a stable liquid

The present invention discloses a rapid polishing of a stable solution, belonging to the field of chemical mechanical polishing a semiconductor. The main component in the present invention comprises a silica abrasive, an alkaline etchant, polyether amine stabilizers and soluble salts thereof. The polishing liquid according to the present invention is greater than the conductivity of 30ms / cm, using the polishing liquid of strong electrolysis under conditions of high electrolyte away promptly decomposed and generated during the polishing insoluble matter, always maintain a high activity and without residual silicon wafer surface polishing cloth surface to ensure the stability of the polishing process quickly removed. The polishing liquid of the invention can be achieved 1.5μm / min or more, and is 1.5 times the normal commercial polishing solution under the same process conditions.