Optoelectronic properties of two-dimensional molybdenum diselenide dual-gated MISFET-based photodetector

Abstract Two-dimensional (2D) molybdenum diselenide (MoSe2) has potential applications in photodetection. In this study, we examined heterostructures based on Gr/h-BN/MoSe2 top-gated metal-insulator-semiconductor field-effect transistors (MISFETs) and Si/SiO2/MoSe2 back-gated metal-oxide-semiconductor field-effect transistors (MOSFETs). Further, we carried out electrical and optoelectronic characterizations of the dual-gated MISFET-based photodetector. The photodetector exhibited effective electrical characteristics of the back-gated MOSFET with a common top gate configuration and narrow current hysteresis. The responsivity and specific detectivity were, respectively, 314 A·W−1 and 2.2 × 10 12 c m · H z 1 / 2 · W - 1 , rendering the dual-gated MISFET suitable for photodetection applications.