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A New Technological Process to Realize InGaAsP/InP Semi-Insulating Buried Heterostructure Lasers Emitting at 1.55 μm
A New Technological Process to Realize InGaAsP/InP Semi-Insulating Buried Heterostructure Lasers Emitting at 1.55 μm
2010
R.Y. Fang
D. Bertone
A. Bricconi
L. Greborio
G. Magnetti
M. Meliga
G. Morello
R. Paoletti
Keywords:
Physics
Optoelectronics
Electronic engineering
Heterojunction
Laser
Correction
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