Fractal formation and tunnelling effects on the conductivity of Au/a-Ge bilayer films
1998
The fractal crystallization of the Au/a-Ge bilayer films has been investigated, and the resistance characteristics have been first measured by the two-probe configuration method. The experimental results suggest that the resistance R of various annealing films are influenced by the fractal formation and the fractal dimension. These phenomena were explained by the Random Tunnelling Junction Network (RTJN) model.
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