Intrinsic Nitrogen-doped CVD-grown TiO2 Thin Films from All-N-coordinated Ti Precursors for Photoelectrochemical Applications†

thin films are characterized byX-ray diffraction (XRD), field emission scanning electron microscopy (FESEM) and atomic force microscopy (AFM).Rutherford back scattering (RBS), nuclear reaction analysis (NRA), and secondary ion mass spectrometry (SIMS) analysesare performed to determine N content and distribution in the films. The optical and photoelectrochemical properties of TiO