High quality InP/SOI heterogeneous material integration by room temperature surface activated bonding for hybrid photonic devices

Heterogeneous wafer bonding of InP/Si at room temperature is studied using surface-activated bonding (SAB) technology. To minimize the degradation of optical property while maintaining enough bonding strength, various bonding conditions including gas species of fast atom beam (FAB) were examined. The results show that a bonding strength of over 0.5 MPa can be obtained with less degradation of photoluminescence (PL) property of InP/Si hybrid wafer by combining Xe and Ar gases for FAB. Using this condition, hybrid wafer including quantum wells were fabricated, which showed sufficient PL property for the fabrication of hybrid photonic devices. The bonding conditions described in this study enabled realization of continuous wave (CW) operation of InP-based layers/SOI hybrid laser.