Bulk electronic transport in arsenic-doped gallium nitride thin films

We present data supporting the hypothesis that arsine introduced during MOCVD growth of GaN changes the point defect chemistry in such a way as to reduce electronic compensation in n-type material. Our evidence consists of bulk electronic transport properties that were determined by varying the total thickness of the epitaxial layer and analyzing the trends in the raw Hall data using a two-layer conduction model and a Monte Carlo simulation. Our experimental findings are discussed within the context of a physical model that attributes the changes of the electrical properties of the material to changes in the stoichiometry of the solid.