Investigation of radiation damage in silicon by elastic scttering of /sup 4/He. [Effects of 80 keV Li ions]

The concentration of radiation defects produced in Si by 80 keV Li ions was determined. It was found that the maximum Li concentration lies at a depth of 4500 A and is shifted into the interior of the Si relative to the center of the profile of the displaced atoms. The widths of half-height of the defect distributions and the Li are comparable and amount to 2800 to 3100 A, respectively. (JRD)