Efficiency limiting processes in 1.55 μm InAs/InP-based quantum dots lasers

The threshold current density, Jth, and its radiative component, Jrad, in 1.55 μm InAs/InP (100) quantum dot lasers are measured as a function of temperature and hydrostatic pressure. We find that Jrad is relatively temperature insensitive. However, Jth increases significantly with temperature leading to a characteristic temperature T0=72 K over the range 220–290 K. Nonradiative recombination accounts for up to 94% of Jth at T=293 K. Jth decreases with increasing pressure by 35% over 8 kbar causing an increase in T0 from 72 to 88 K. The results indicate that nonradiative Auger recombination determines temperature behavior of these devices and T0 value.