IEEE 1988 Bipolar Circuits E Tdnology Meeting 'An Experimental Soft-error Immune 64-Kb 3ns ECL Bipolar RAM"

Kunihiko Yamaguchi,Hiroaki Nanbu,Noriyuki Homma,Akihisa Uchida,Katsumi Ogiue

IEEE 1988 Bipolar Circuits E Tdnology Meeting 'An Experimental Soft-error Immune 64-Kb 3ns ECL Bipolar RAM"

1988

Kunihiko Yamaguchi
Hiroaki Nanbu
Noriyuki Homma
Akihisa Uchida
Katsumi Ogiue

An experimental soft-error immune 64-Kb 3x1s ECL RAM has been developed. Its key factors are: a soft-error immune memory cell, an upward transistor decoder. a darlington word driver with advanced discharge circuits, and 0.8Lrm SICOS technology.

Keywords:

Electronic circuit
Transistor
Soft error
Memory cell
Electronic engineering
Computer science
Electrical engineering
bipolar circuits
immunological memory
key factors

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