STUDIES OF DEFECTS ON ION IRRADIATTED DIAMOND

Based on previous work, a knowledge of the defect structures created in diamond is crucial for optimizing the doping of diamond by ion irradiation. In the present work, type Ha diamond has been irradiated with 320keV Xe ions at room temperature. It was found that up to a dose of 1×10 14 ions/cm 2 , the diamond remains single crystalline, with no evidence of graphitization. TEM results are supplemented with EELS, Raman spectroscopy, ESR and electrical conductivity measurements, to provide a comprehensive picture of the defect structure in the ion implanted layer.