Si-based resonant tunneling diodes for room temperature operation

We report a theoretical investigation on the electrical characteristic of n-type resonance tunneling diode for IV-IV compound. From the analysis, it shows that PVR ratio of the D4 band is significant larger than the D2 band as due to the much smaller effective mass of the D4 band. More importantly, a different structure is employed for room temperature operation and a reasonable PVR ratio is obtained which is desired for the application.