Diffusion of chromium in GaAs under equilibrium arsenic-vapor pressure

The diffusion of chromium in GaAs is studied under equilibrium arsenic-vapor pressure. The temperature dependences of chromium diffusivity and solubility in GaAs are determined. These dependences are described by the Arrhenius equation with the parameters D 0 = 3.1 × 105 cm2/s and E = 3.2 ± 0.4 eV for the diffusivity and N S = 2.1 × 1021 cm−3 and E S = 1.0 ± 0.3 eV for the solubility. The obtained experimental results are compared with our previously published data on the diffusion of chromium under high arsenic-vapor pressure and analyzed in terms of the dissociative mechanism of migration of chromium in GaAs.