Growth of 3C-SiC on si(111) using the four-step non-cooling process

Abstract A modified four-step method was applied to grow a 3C–SiC thin film of high quality on the off-axis 1.5° Si(111) substrate in a mixed gas of C 3 H 8 , SiH 4 and H 2 using low pressure chemical vapor deposition. The modified four-step method adds a diffusion step after the carburization step and removes the cooling from the traditional three-step method (clean, carburization, and growth). The X-ray intensity of the 3C–SiC(111) peak is enhanced from 5 × 10 4  counts/s (the modified three steps) to 1.1 × 10 5  counts/s (the modified four steps). The better crystal quality of 3C–SiC is confirmed by the X-ray rocking curves of 3C–SiC(111). 3C–SiC is epitaxially grown on Si(111) supported by the selected area electron diffraction patterns taken at the 3C–SiC/Si(111) interface. Some {111} stacking faults and twins appear inside the 3C–SiC, which may result from the stress induced in the 3C–SiC thin film due to lattice mismatch. The diffusion step plays roles in enhancing the formation of Si–C bonds and in reducing the void density at the 3C–SiC/Si(111) interface.