Surface morphology of ion-beam deposited carbon films under high temperature
2002
Carbon films with an open-ended structure were obtained by mass-selected ion-beam deposition technique at 800 °C. Raman spectra show that these films are mainly sp2-bonded. In our case, threshold ion energy of 140 eV was found for the formation of such surface morphology. High deposition temperature and ion-beam current density are also responsible for the growth of this structure. Additionally, the growth mechanism of the carbon films is discussed in this article. It was found that the ions sputtered pits on the substrate in the initial stage play a key role in the tubular surface morphology.
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