Experimental Study of a Low-Voltage 4H-SiC Drift Step Recovery Diode

The results of an experimental study of low-voltage 4H-SiC drift step recovery diodes (DSRDs) are presented. Theoretical analysis of the diodes’ operation has been carried out by Synopsys Sentaurus TCAD simulation using drift-diffusion charge transport approach including the effects of high injection and incomplete dopants ionization. The effect of picosecond switching of a low-voltage 4H-SiC DSRD is experimentally observed. The results of Synopsys TCAD simulation are in reasonable agreement with the experiment.