Depth profiles of implanted 18F, 79Br, and 132Xe in silicon in the energy range 85–600 keV

Abstract The RBS technique and 19 F(p, αγ) 16 O resonance nuclear reaction at 872.1 keV, with Γ = 4.2 keV, were used to measure the depth profiles of implanted 79 Br, 132 Xe and 19 F in silicon samples. A special convolution procedure was used to extract the depth profiles from the RBS spectra and the experimental excitation yield curves. The range parameters, R p and Δ R p obtained in thi experiment were compared with theoretical calculations.