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Growth of pseudomorphic Si 1- y C y and Si 1- x- y Ge x C y alloy layers on Si by ion implantation
Growth of pseudomorphic Si 1- y C y and Si 1- x- y Ge x C y alloy layers on Si by ion implantation
1998
E. Fogarassy
A. Grob
J.-J. Grob
Dominique Muller
B. Prévot
Salome de Unamuno
Pierre Boher
Marc Stehle
Keywords:
Radiochemistry
Biochemistry
Ion implantation
Chemistry
Silicon-germanium
Excimer laser
Single crystal
Y alloy
Band gap
Metallurgy
Correction
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