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The Gate Length Reducing Process for Pseudomorphic In0.52Al0.48As/In0.7Ga0.3As HEMTs
The Gate Length Reducing Process for Pseudomorphic In0.52Al0.48As/In0.7Ga0.3As HEMTs
2006
Seong-Jin Yeon
Jongwon Lee
Gyungseon Seol
Kwang-Seok Seo
Keywords:
gate length
Materials science
Optoelectronics
Correction
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