Numerical modelling of action on transparent semiconductors of short and ultrashort laser pulses with wavelength at the material absorption edge.

Abstract The numerical model was developed of local heating a semiconductor material by laser pulses with wavelength at the area of the material intrinsic absorption edge. The mechanism of heating by nano- and picosecond pulses is based on the effect of thermal shifting the edge of the semiconductor absorption, while for femtosecond pulses the edge is shifted under acting the electric field of a light wave. The material heating by nano- and picosecond pulses can be of two types: spot-like and linear-like. In the case of femtosecond pulses the spot-like heating is realized. It was found that the local heating is accompanied by the material structure change, which corresponds to the character of heating.