Low noise AlInAs/InGaAs HEMT using WSi ohmic contact

A 0.15 mu m T-shaped gate AlInAs/InGaAs HEMT with excellent RF performance has been developed using refractory WSi non-alloyed ohmic contacts. An extremely low noise figure of 0.8 dB with an associated gain of 8.0 dB has been achieved at 40 GHz for an SiON-passivated device. >