In-situ Activation of an Indium(III) Triazenide Precursor for Epitaxial Growth of Indium Nitride by Atomic Layer Deposition
2020
Indium nitride (InN) is characterized by its high electron mobility making it a ground-breaking material for high frequency electronics. The difficulty of depositing high-quality crystalline InN cu...
Keywords:
- Correction
- Source
- Cite
- Save
- Machine Reading By IdeaReader
51
References
6
Citations
NaN
KQI