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Scalable gate two EBL steps fabrication process for optimal high frequency GaN HEMT performances
Scalable gate two EBL steps fabrication process for optimal high frequency GaN HEMT performances
2011
M. Peroni
A. Nanni
C. Costrini
D. Dominijanni
E. Giovine
Ernesto Limiti
W Ciccognani
Keywords:
Electronic engineering
Scalability
Fabrication
Electrical engineering
High-electron-mobility transistor
Engineering
Nanotechnology
Engineering physics
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