Self-organizing lithography process and underlayer film-formation composition

The present invention is a self-organizing lithography process having: a step for forming, using a compound containing a silicon-atom-containing compound, a silicon-atom-containing film in which the static contact angle of pure water is no greater than 70°; a step in which a self-organizing film having a phase-separated structure is layered on the silicon-atom-containing film; and a step for removing at least some of the phases in the self-organizing film. As the silicon-atom-containing compound, a polysiloxane is preferable. As the polysiloxane, a hydrolysis condensate of a compound including the hydrolyzable silane compound expressed in formula (i) below is preferable.