Optimization of Anodic Layer and Fabrication of Organic Light Emitting Diode

Ga doped ZnO (GZO) films of different concentrations (1, 2 and 4 mol%) have been deposited on glass substrates by RF magnetron sputtering. The grown layers at room temperature have been subjected to structural, optical and electrical characterization. It has been found that 2 mol% Ga doped ZnO has best structural, optical and electrical properties which has been used as anode layer for the fabrication of Organic Light Emitting Diode (OLED). The Zn0.98Ga0.02O film was then deposited at a lower working pressure of 0.015 mbar to obtain a good carrier concentration. The OLED structure has been fabricated with best GZO as anode layer, [N, N*-Diphenyl N, N*-Di-p-Tolylbenzene-1] as hole emitting layer and (Alq3) as electron transport layer. The fabricated OLED device has been subjected to current-voltage characteristics.