Photoresist forming method, polymer structure, and photoresist

PURPOSE: To enable formation of a photoresist superior in silylization characteristics by leaching a narrow pore forming material from a polymer film to form a porous structure and then allowing an organometallic component to invade the formed micropores and to bring it into contact with the micropore structure. CONSTITUTION: The inactive narrow pore forming material is mixed into the photoresist composition comprising the polymer resin of the photoresist and a photoactive compound, and this narrow pore forming material can be leached from the photoresist film and this material has a molecular weight large enough to allow the compound to be used for silylization to disperse into the narrow pores formed by the leaching, thus permitting the obtained photoresist to be enhanced in the silylization characteristics. COPYRIGHT: (C)1990,JPO