3.2: An Integrated Gate Driver Circuit Employing Depletion‐Mode IGZO TFTs

Integrated gate driver circuit with Oxide TFTs often suffers from the leakage current problem due to the depletion-mode TFT's characteristic. This paper analyzed the origin of circuit failure and proposed a leakage current cutting technique in which using output feedback to turn off the normally-on switches. The feedback scheme is designed not only within its own stage but across the neighboring stages. Compared with previous work, it avoids the degradation of the output caused by the feedback TFT, thus providing a more robust solution. The circuit is fabricated employing a-IGZO TFTs. The experiment result shows that the circuit works successfully with maximum −4.5V threshould voltage.