Investigations on the nanostructures of GaN, InN and InxGa1-xN

Abstract A controllable approach to the formation of III- nitride nanocrystalline structures using hydrothermal assisted method is presented. The structural and morphological properties of the prepared nanostructures are analyzed using X-ray diffraction, Fast Fourier Transformation and transmission electron microscope techniques. The temperature dependent structural formation of nitride nanostructures have been systematically investigated using X-ray diffraction. Raman spectra of the samples grown at optimized condition exhibited different phonon modes of the respective nitrides (GaN, InN and In x Ga 1−x N). Nanoparticles and nanorods formation of the indium nitride and indium gallium nitride are observed in the TEM micrographs. FFT analysis revealed that the synthesized III-nitride nanostructures are of good crystalline quality. Nanorods of these nitrides showed better crystalline quality than the nanoparticles in the FFT reflections.