Intermediate band solar cell design using InAs quantum dots in AlAsSb cladding

We present simulations of InAs QDs embedded in AlAsSb, which may be a promising candidate system for realizing intermediate band solar cells as it features bandgaps close to the ideal and a nearly flat type-II valence band lineup. We have also experimentally investigated InAs quantum dots (QDs) grown in an AlAs0.56Sb0.44 matrix in the unintentionally doped (uid) region of an In0.52Al0.48As solar cell. Optical and electrical properties of the solar cell were investigated to evaluate the possibility of photon assisted absorption from the QD states. As well, potential designs for a AlAs0.56Sb0.44 heterojunction QD solar cell were evaluated.