Photoluminescence from C+-implanted SiO2 films after swift heavy ion irradiations

A novel technique. "low energy ion implantation + swift heavy ion irradiation", was used to synthesize light-emitting materials. In the present work, SiO2 films were implanted with 120 keV C- ions at room temperature (RT) to total doses from 5.0 x 10(16) to 1.0 x 10(18) ions/cm(2), and then irradiated at RT with swift Xe or U ions to different irradiation fluences. Photoluminescence (PL) spectra of these samples were measured at RT and intense blue-violet PL bands were observed. The properties of the PL bands were analyzed as a function of implantation ion dose, swift heavy ion irradiation fluence and electronic energy loss of the irradiation ion in the sample. The possible origins of the observed blue and violet emissions were also discussed. (C) 2002 Elsevier Science B.V. All rights reserved.