Discharge cutting technology for specific crystallographic planes of monocrystalline silicon

Abstract Crystallographic planes were detected with X-ray crystal orientation instrument to study wire-cut electrical discharge machining (WEDM) technology for specific crystallographic planes of monocrystalline silicon. The unidirectional conductivity of monocrystalline silicon was analyzed. The contact potential barrier was decreased by preparing Ohmic contact to the surface discharging of the input terminal. Finally, the high-precision discharge cutting of the specific crystallographic planes of monocrystalline silicon was validated. Finished silicon products with specific crystallographic planes were prepared by WEDM, and the cutting efficiency, surface quality, crystal orientation precision, and qualified rate were determined. With cutting thickness of 200 mm, the cutting efficiency reached 100 mm 2 /min, and the precision of crystal orientation reached 3′ or less.