III-V micro- and nano-lasers grown on silicon emitting in the telecom band
2020
We present our recent effort on the integration of 1.5 μm III-V micro-cavity lasers on (001) Si wafers, and bufferless nano-lasers on (001) silicon-on-insulators (SOI) via direct hetero-epitaxy by metal organic chemical vapor deposition.
Keywords:
- Correction
- Source
- Cite
- Save
- Machine Reading By IdeaReader
14
References
0
Citations
NaN
KQI