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A Manufacturing Grade, Porous Oxycarbosilane Spin-On Dielectric Candidate with K ≤ 2.0
A Manufacturing Grade, Porous Oxycarbosilane Spin-On Dielectric Candidate with K ≤ 2.0
2011
Willi Volksen
Teddie Magbitang
Robert D. Miller
Sampath Purushothaman
S. Cohen
Hisashi Nakagawa
Youhei Nobe
Terukazu Kokubo
Geraud Dubois
Keywords:
Dielectric
Porosity
Inorganic chemistry
Spin-½
Chemistry
Analytical chemistry
Chemical engineering
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