Low-temperature coexistence of memory and threshold switchings in Pt/TiOx/Pt crossbar arrays

In this work, we studied the low-temperature electrical switching characteristics of a Pt/TiOx/Pt crossbar array. The device exhibits threshold switching behavior upon cooling from 100 K to 65 K and an interesting combination of threshold and memory switchings at temperatures between 65 K and 25 K. The thermally activated changes of these switching characteristics are discussed.